Table 6.
Equations of the lodging parameters: stem bending resistance (N), stem crushing strength (N) at basal internode three.
| PP | Lodging % at anthesis stage | SBR (N) at internode three | SCS (N) at internode three | SBR (N) at internode three at 15° | |
|---|---|---|---|---|---|
| C1 | a | 2.444 | −11.553 | −20.12 | −5.5545 |
| b | −3.195 | 352.43 | 480.98 | 123.49 | |
| R2 | 0.995∗∗ | 0.9237∗∗ | 0.9716∗∗ | 0.8985∗∗ | |
| C2 | a | 5.216 | −12.644 | −20.418 | −5.315 |
| b | − 12.542 | 347.38 | 456.24 | 112.95 | |
| R2 | 0.988∗∗ | 0.9448∗∗ | 0.9722∗∗ | 0.844∗∗ | |
| C3 | a | 6.021 | −12.367 | −20.237 | −5.2037 |
| b | − 15.80 | 321.24 | 435.15 | 105.17 | |
| R2 | 0.997∗∗ | 0.9319∗∗ | 0.9554∗∗ | 0.8575∗∗ |
Where SBR is stem bending resistance (N), SCS is stem crushing strength (N), C1 is Zhengdan 958, C2 is Longping 206, C3 is Jinqiu 119. R2 is significant ∗∗(p < 0.01), ∗(p < 0.05).