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. 2018 Sep 11;9:1047. doi: 10.3389/fpls.2018.01047

Table 7.

Equations of the lodging parameters: stem bending resistance (N), stem crushing strength (N) at basal internode three with internode morphology.

Correlation of SBR and ID at internode three Correlation of SCS and ID at internode three Correlation of SBR and ID at internode three at 15° Correlation of SBR and ID/L at internode three Correlation of SCS ID/L at internode three Correlation of SBR and ID/L at internode at three 15°
C1 a 0.0485 0.1028 0.0291 0.0057 0.0037 0.0112
b 7.321 12.045 10.739 0.9944 1.3307 1.6182
R2 0.9431∗∗ 0.9686∗∗ 0.9325∗∗ 0.7253∗∗ 0.8146∗∗ 0.7834
C2 a 0.0511 0.1063 0.0285 0.0059 0.0036 0.0142
b 7.8734 11.821 10.99 1.1566 1.3704 1.4196
R2 0.9826∗∗ 0.9932∗∗ 0.8903∗∗ 0.9607∗∗ 0.7417∗∗ 0.8633∗∗
C3 a 0.0467 0.1114 0.0291 0.0037 0.0023 0.0087
b 7.6482 12.054 11.119 1.3727 1.6432 1.7385
R2 0.9285∗∗ 0.988∗∗ 0.9156∗∗ 0.8995 0.9249∗∗ 0.9077

Here SBR is stem bending resistance, SCS is stem crushing strength, ID is internode diameter, ID/L is internode diameter/length and C1 Zhengdan 958, C2 Longping 206, C3 Jinqiu 119. R2 is significant ∗∗(p < 0.01), (p < 0.05).