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. 2018 Sep 21;13:291. doi: 10.1186/s11671-018-2721-0

Fig. 3.

Fig. 3

P-type electric properties of multi-layered MoTe2 transistor in vacuum. a RT transfer characteristics of a p-type MoTe2 transistor at Vsd = 1 V as a function of vacuum. b RT output characteristics of a p-type MoTe2 transistor at different Vbg in 2.9 × 10−5 mbar vacuum