Figure 3.

Position-Dependent Photodetection Properties

(A) I-V curves of the photodetector as a function of distance ranging from 0 to 950 μm under 553-nm laser with an intensity of 22 μW.

(B) Photocurrent and responsivity as a function of distance at voltage of 10 V (P = 22 μW).

(C) The plots of the dependence of ΔI (ΔI = I_Photocurrent-I_Darkcurrent) on the illumination position, measured at different incident intensities (V = 10 V).

(D) Time response of the device under different illumination positions (λ = 553 nm; P = 22 μW; V = 10 V).

(E) Time-resolved photoluminescence of MAPbBr₃ single crystal under different laser intensities.

(F) Fitting carrier lifetime and diffusion length under different laser intensities from Figure 3E.