Fig. 2.

Experimental and simulated projected atomic electric field maps of single Si dopants in graphene. a, e ADF-STEM images, b, f electric field strength maps, c, g electric field vector maps, d, h calculated electric field strength maps from simulated STEM images for the 16 segmented detectors, in the coordination of Si–C₃ and Si–C₄, respectively. The contrast ranges in (b), (f) and (d), (h) are 0–40 V and 0–93 V, respectively. The numbers in (a), (e) indicate the number of members in the ring. The scale bars in (a), (d), (e), (h) are 2 Å.