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. 2018 Sep 4;34(38):11395–11404. doi: 10.1021/acs.langmuir.8b02401

Figure 1.

Figure 1

(a) Schematic illustration of the formation of SiO2 dots surrounded by H-terminated Si and subsequent material-selective monolayer formation (BHF = buffered hydrogen fluoride), (b–d) Fluorescence microscopy images (exposure time 1 s) of SiO2/Si patterns functionalized with (b) 1,8-nonadiyne and azide-functionalized dye, (c) the same sequence as (b) with an extra BHF dip (10 s) after the 1,8-nonadiyne monolayer formation, and (d) a control sample without 1,8-nonadiyne, and (e–g) elemental mapping of the C 1s, N 1s, O 1s, and Si 2p regions on the SiO2/Si patterned substrates of (e) panels b, (f) c, and (g) d.