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. 2018 Sep 18;11(9):1762. doi: 10.3390/ma11091762
CNP Charge neutrality point
EQE External quantum efficiency
FET Field-effect transistor
FG Fluorographene
FLG Few-layer graphene
GO Graphene oxide
hBN Hexagonal boron nitride
IQE Internal quantum efficiency
IR infra-red
LDR Linear dynamic range
LED Light-emitting diode
MIR mid infra-red
NEP Noise equivalent power
NIR near infra-red
PD(s) Photodetector(s)
PG Photogating
PSD Posision-sensitive (photo)detector
PTE Photo-thermoelectric effect
PV Photovoltaic
QD(s) Quantum dot(s)
rGO reduced graphene oxide
SPCM Scanning-photocurrent map(ing)
TMD(s) Transition-metal dichalcogenide(s)
UV ultra-violet
vdW van der Waals