| CNP | Charge neutrality point |
| EQE | External quantum efficiency |
| FET | Field-effect transistor |
| FG | Fluorographene |
| FLG | Few-layer graphene |
| GO | Graphene oxide |
| hBN | Hexagonal boron nitride |
| IQE | Internal quantum efficiency |
| IR | infra-red |
| LDR | Linear dynamic range |
| LED | Light-emitting diode |
| MIR | mid infra-red |
| NEP | Noise equivalent power |
| NIR | near infra-red |
| PD(s) | Photodetector(s) |
| PG | Photogating |
| PSD | Posision-sensitive (photo)detector |
| PTE | Photo-thermoelectric effect |
| PV | Photovoltaic |
| QD(s) | Quantum dot(s) |
| rGO | reduced graphene oxide |
| SPCM | Scanning-photocurrent map(ing) |
| TMD(s) | Transition-metal dichalcogenide(s) |
| UV | ultra-violet |
| vdW | van der Waals |