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. 2018 Sep 8;18(9):3007. doi: 10.3390/s18093007

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© 2018 by the authors.

Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

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Structural overview of the dielectrophoresis (DEP) device. Schematic diagram of (A) cross-section and (B) bird’s eye view of the dismantled and constructed DEP devices. (C) Saw-shaped indium tin oxide (ITO) electrode printed on the bottom of the DEP device. (D) Illustration of p-DEP and n-DEP on the saw-shaped ITO electrode in the device. (E) Numerical simulation of electric field strength on (left) the saw-shaped ITO electrodes and (right) the line-shaped ITO electrodes by the finite element method (FEM). The potentials on the electrodes were set to 10 V. The height of calculated x-y plane is 4 μm from the bottom and scale bar represents 100 μm.