Fig. 2.

Transport properties of CQD multi-bandgap ensembles a bottom-gate top-contact field-effect transistor structure; transfer characteristics of pure CQD and multi-bandgap CQD ensembles with different weight ratio of large bandgap (L) to small bandgap (S) CQDs showing onset voltage (V_ON) b, transfer characteristics of pure and mixed CQDs with different weight ratios of large bandgap (L) to small bandgap (S); c tail state density (N_T) of the optimal CQD mixture (weight ratio of 2 to 1) as a function of gate bias as calculated with Eq. (3); d mobility and trap density as a function of the inclusion of L in the mixed films