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. 2018 Oct 8;9:4153. doi: 10.1038/s41467-018-06661-9

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — C_2v symmetric interferences on ZrSiSe(001) in single-defect-induced quasiparticle interference (s-QPI) patterns. a and b are voltage-dependent dI/dV maps (18×18 nm², 400 mV, 1 nA) and Fourier transformed (FT) dI/dV maps, depicting the real and reciprocal space s-QPI patterns arising from a single C_2v symmetric defect, respectively. The defect is attributed to a Si vacancy. With increasing bias voltage, the intrinsic C_4v symmetry gradually recovers. The arrow indicates the wave propagating direction