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. 2018 Oct 8;9:4153. doi: 10.1038/s41467-018-06661-9

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — C_4v symmetric s-QPI patterns on ZrSiSe (001). a and b are voltage-dependent dI/dV maps (18×18 nm², 400 mV, 1 nA) and FT-dI/dV maps arising from a single C_4v defect, respectively. The arrows represent the two wave propagating directions. The defect is attributed to a Zr vacancy. Note the scanning directions of all images are rotated π/4 with respect to the images in Fig. 2a for technical reasons. The solid (dotted) circle surrounds the QPI feature induced from normal (Umklapp) process