Table 3.
Material | Tm (°C) | ΔH (J/g) |
---|---|---|
untr. PCL | 70.20 ± 0.10 | 73.0775 ± 1.3384 |
VASE-tr. 0:100 (w:w) ACV:PCL | 63.84 ± 0.43 | 75.3630 ± 4.7970 |
VASE-tr. PCL in 10:90 (w:w) ACV:PCL device | 65.60 ± .030 | 69.9022 ± 1.5858 |
VASE-tr. PCL in 30:70 (w:w) ACV:PCL device | 65.58 ± 1.56 | 53.2311 ± 8.3285 |
VASE-tr. PCL in 50:50 (w:w) ACV:PCL device | 65.01 ± 0.70 | 19.6963 ± 7.8685 |
| ||
VASE-tr. ACV in 10:90 (w:w) ACV:PCL device | 238.49 ± 7.72 | 14.9521 ± 7.6689 |
VASE-tr. ACV in 30:70 (w:w) ACV:PCL device | 233.87 ± 0.91 | 26.7761 ± 19.9455 |
VASE-tr. ACV in 50:50 (w:w) ACV:PCL device | 232.81 ± 0.30 | 53.5217 ± 9.5136 |
VASE-tr. 100:0 ACV:PCL | 233.82 ± 0.20 | 55.5956 ± 3.7339 |
untr. ACV | 257.29 ± 0.34 | 143.5112 ± 23.3110 |
untr.: materials left untreated.
VASE-tr.: materials treated by VASE method.
Tm: melting point.
ΔH: enthalpy of melting.