Fig. 3. Charge transport in vertical molecular transistors.

(A) Schematic illustration of the working device with EDLs. (B) Schematic band diagram of the device with changed V_D at graphene electrode. (C) Schematic band diagram of the device with changed V_G. (D and G) Transmission coefficient T(E) versus $\mathit{E}-{\mathit{E}}_{\mathrm{F}}^{\text{Gold}}$ for PCP (D) and OPE3 (G) junctions for −0.4 < V_D < 0.4 with steps of 0.2 V. (E and H) Gate-dependent theoretical I_D-V_D characteristics for PCP (E) and OPE3 (H). (F and I) Gate-dependent theoretical dI/dV-V_D for PCP (F) and OPE3 (I). V_G is varied from −0.6, −0.3, 0.0, 0.3, to 0.6 V in (E), (F), (H), and (I).