Fig. 2.

Demonstration of flexible active electronics encapsulated with the p⁺⁺-Si // t-SiO₂ structure and analysis of leakage behaviors. (A and B) Results (subthreshold and leakage characteristics) from soak tests of a device with a p⁺⁺-Si via exposed to PBS solution at 96 °C. The results indicate stable operation until failure due to dissolution of the p⁺⁺-Si after 30 h. (C) Results from tests of a similar structure under identical conditions but with a coating of Au (300 nm) on the side of the system in contact with the PBS. Here, failure occurs at day 3. (D) Results from tests at different temperatures for structures with and without the Au coating. The lifetimes at 37 °C (156 and 285 d without and with the Au, respectively) correspond to extrapolations based on Arrhenius scaling from data collected at temperatures of 96, 70, and 65 °C for p⁺⁺-Si without the Au coating and of 96, 90, 70, and 60 °C for that with the Au.