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. 2018 Apr 24;9(5):197. doi: 10.3390/mi9050197

Figure 4.

Figure 4

(a) Relative changes of drain current (∆IDS/IDS) as a function of applied strain for different coupled gate dielectric/OSC layers in OFET-embedded cantilever; (b) (∆IDS/IDS) plotted versus elapsed time for different levels of relative humidity by steps of 10%. Black arrows correspond to the instruction of humidity level set by the environmental chamber.