Table 1.
Mask Material | Etch time (min) | Etched SiOx Depth (μm) | Etched Mask Depth (μm) | Etch Rate (μm/min) | Selectivity |
---|---|---|---|---|---|
KMPR 1035 | 110 | 57 | 43 | 0.52 | 1.33 |
a-Silicon | 2.5 | 1 | 0.27 | 0.4 | 3.7 |
Chromium | 45 | 22 | 1 | 0.49 | 22 |
Mask Material | Etch time (min) | Etched SiOx Depth (μm) | Etched Mask Depth (μm) | Etch Rate (μm/min) | Selectivity |
---|---|---|---|---|---|
KMPR 1035 | 110 | 57 | 43 | 0.52 | 1.33 |
a-Silicon | 2.5 | 1 | 0.27 | 0.4 | 3.7 |
Chromium | 45 | 22 | 1 | 0.49 | 22 |