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. 2016 Sep 8;7(9):160. doi: 10.3390/mi7090160

Figure 18.

Figure 18

Fabrication of vertical narrow gaps in a polysilicon-based process: (a) Growth of sacrificial oxide; (b) Growth and patterning of polysilicon structural layer after patterning of sacrificial oxide; (c) Release of polysilicon structure of removal of sacrificial oxide.