Skip to main content
. 2018 Oct 19;4(10):eaau6261. doi: 10.1126/sciadv.aau6261

Fig. 1. Schematic diagram of the atomic-level structure engineering of ZnxCo1−xO for high-rate intercalation pseudocapacitance applications.

Fig. 1

Arrays of single-crystal ZnxCo1−xO nanorods (NRs) are in situ fabricated on a conductive substrate to ensure quick charge transportation. For every single ZnxCo1−xO NR, the uniform doping of Zn ions in the oxide host assures fast electrical conduction, while the creation of O vacancy–rich {111} nanofacets enables easy access of oxygen ions into the oxide host with a low energy barrier.