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. 2018 Oct 23;13(10):e0206172. doi: 10.1371/journal.pone.0206172

Fig 3. Overview of fabrication of silicon/silicon-nitride (Si/SiN) TEM substrates.

Fig 3

Wafers are initially deposited with low-stress silicon nitride (100 nm-thick) followed by photolithography, and plasma etching. In practice we fabricated eight substrates on one 100-mm diameter wafer. See Supplemental Information for fabrication plan details.