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. 2017 Oct 13;10(1):5. doi: 10.1007/s40820-017-0159-z

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© The Author(s) 2017

Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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Fig. 4 — Plots of dark current of planar PSCs as well as fitting curve by using Eq. 13. a The device structure is shown in Fig. 1c, the perovskite films prepared by mixing with different concentrations of Cl ions. b The device structure is PEDOT:PSS/CH₃NH₃PbI_3-xCl_x/PCBM/hole-blocking layer/Al, with the original data coming from the Ref. [8]. The inset regions A, B, C, D are mainly determined by shunt current, recombination current in diode space-charge region, diffusion current, diode diffusion current limited by series resistance, respectively. (Color figure online)