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. 2017 Dec 8;10(2):23. doi: 10.1007/s40820-017-0176-y

Table 5.

Summary of pollutant degradation performances of 2D modified TMO&Cs

Material Dimension/thickness Light source Loading Reaction solution DR (% μmol (gh)−1) Comparison Ref.
Elemental doping
Mo-WO3 NS 400–1600 nm/150 nm Visible light NA RhB 12.5 [122]
B, F-codoped TiO2NS 10 nm/2.5 nm Xe lamp NA MB 18 [119]
C-ZnO flower 9 µm/~ 10 nm Xe lamp NA RhB 1.5 [120]
ZnO NS/P-MoS2 NS Sunlight NA MB 222 [121]
Mn-CuO NS Xe lamp NA MB 20.26 11.25 (CuO) [123]
N-MoS2 flower Visible light NA RhB 134.2 [117]
Heterojunction with semiconductors
WO3 NS/Ag3PO4 NP Xe lamp MB 85.5 [168]
Ti0.87O2 NS/CdS pillar 100–500 µm/– Xe lamp MB 58 0.078 (N-TiO2) [151]
ZnO NS/WO3 NR Xe lamp MB 533 [154]
MoS2 NS/CdS NP Xe lamp 2 mol % MoS2 MB/RhB 40 [144]
MoS2 flower/CdS NP 800 nm/– Xe lamp MB 97 [98]
MoS2NS/CuS NP Visible light MB 104.21 [148]
Fe3O4@MoS2 Core − Shell Blue light 4-NP 285 [199]
MoS2 NS/Ag3PO4 NP Xe lamp 1 wt% MoS2 RhB 93.9 [68]
MoS2 NS/Ag3PO4 NP Xe lamp 0.65 wt% MoS2 RhB 18.78 [166]
MoS2-r-GO NS/Ag3PO4 NP Xe lamp 0.02 wt% MoS2-r-GO Phenol 1593.8 [167]
MoS2 NS/TiO2 NF 120–300 nm/– UV light MO 497.53 26.18 (MoS2); [143]
MoS2 NS/TiO2 NR Xe lamp 50 wt% MoS2 RhB 939.4 817.3 (MoS2); 328.8 (TiO2) [56]
ZnS NS/ZnO NP 400–1000 nm/40 nm W lamp MB 6.4 4.6 (ZnS) [155]
WS2/WO3 NP Visible light MB 378.9 [157]
Heterojunction with conductive materials
TiO2 NS/carbon QD 45–55 nm/6 nm Visible light RhB 19.83 8.3 (TiO2 NP) [159]
TiO2 NS/g-C3N4 NS 38 nm/6 nm UV–Vis light MB 4.5 [149]
ZnO flower/Ag NP –/10–19 nm Hg lamp; Xe lamp RhB 3.2 0.88 (ZnO NP) [174]
ZnO NS/Ag NP UV light MO 389.5 [176]
Fe2O3 NS/r-GO NS 200 nm/– Xe lamp RhB 1.4 [98]
MoS2 NS/g-C3N4 NS 0.05 wt% MoS2 MO 40.7 [55]
MoSe2 NS perpendicular to r-GO NS Xe lamp MB 70.34 15.4 (MoSe2 NS/r-GO NS) [181]
CoS NS/2D r-GO NS ~ 200–300 nm/~ 10–20 nm Visible light 26.2 wt% CoS MB 47.41 28.13 (CoS) [182]

DR degradation rate, NS nanosheet, NP nanoparticle, NR nanorod, NF nanofiber, QD quantum dot