Table 8.

Various piezoresistor materials and their respective features used to realize SU-8 piezoresistive cantilever sensors

Piezoresistor	G/E ratio	Nominal resistance	Fabrication steps to realize the piezoresistor	Issues/features	References
Metal	0.4	500 Ω–1.5 kΩ	Sputtering/thermal evaporation	Higher rate of joule heating Plastic deformation of the cantilever Reduced SNR Electro-migration effect in resistors Adhesion of metal with SU-8	[68, 87, 226, 229, 231]
Polysilicon	4.0	100–200 kΩ	HWCVD	High dependence of electrical properties of poly-Si on process parameters Higher stiffness compared to metal piezoresistor Adhesion of poly-Si with SU-8	[217, 230, 260]
CB SU-8	4.0	185–550 kΩ	Spin coating	Higher gauge factor, low-temperature process Lower residual stress Dependence of mechanical properties on CB loading Electrical resistivity variation due to CB dispersion issues	[67, 192, 233, 250]