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. 2018 Oct 25;8:15807. doi: 10.1038/s41598-018-34001-w

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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High frequency structure simulator (HFSS) electrical field simulation results of the bare resonator. (a) The bare geometry of the sensor, (b) the electrical field simulation at the surface of the resonator parallel to the sensor plane, (c) the electrical field simulation perpendicular to the sensor plane and along the ring structure, (d) the electrical field simulation perpendicular to the sensor plane and along the sensitive region of the sensor, (e) HFSS simulation results compared with experimental S21 parameters gathered from testing the resonator alone and with the microfluidic chip assembled. (f) HFSS depiction of the sensor geometry and its entirety.