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. 2018 Oct 12;10(41):19443–19449. doi: 10.1039/c8nr05296d

Fig. 2. (a) Two-terminal IV measurements of Ge0.81Sn0.19 NWs with diameters between 110–180 nm and a Au-seeded NW of intrinsic Ge (dashed line) for comparison. (b) Four-terminal devices are used to illustrate the influence of the contact resistance and the corresponding two-terminal measurement using the same NW is illustrated for comparison.

Fig. 2