Table 4.
Power | Chip Area (μm2) | The Number of Arrays | Voltage Output Type | Capacitance Resolution (aF) | Sensitivity | IDR of ΔC (fF) | Supply Voltage (V) | Tech. | Principle | Ref. |
---|---|---|---|---|---|---|---|---|---|---|
29 μW | 105 | 16 × 16 | Analog | 450 aF | 55 mV/fF | 0.45 −57 |
- | 0.25 μm | 1 ChR (2 ChS) | [20] |
- | - | 320 × 320 | Analog | 21 aF | 345 mV/fF | - | - | 0.35 μm | ChR (3 CSA) | [15] |
8 mW | 3.6 × 105 | 4 × 4 | Digital | 17.5 aF | 590 kHz/fF | 12 fF | 3.3 | 0.35 μm | 4 C2F (5 RO) | [23] |
84 mW | 6 × 106 | Digital | 0.065 aF | 32 | <1 | 3.3 | 0.35 μm | Lock-in | [43] | |
- | 6.272 × 105 | 4 | Analog | 10 | 1 V/fF | 2 | 5 | 0.8 μm | 6 CBCM | [61] |
- | 2 × 106 | 3 | Digital | 10 | 255 mV/fF | ~2.7 | 1.8 | 0.18 μm | CBCM | [62] |
8 3.06 × 10−3 μW (core) (at 1 kHz) 1.65 × 102 μW (Buffer amplifier) | 7 1.45 × 102 | 6 × 6 | Analog | 15 | 200 mV/fF | 25 | ±3 | 0.5 μm | CBCM | [64] |
580 (at 150 kHz) | 104 | 1 | Digital | 10 | 350 mV/fF | 10 | ±3.3 | 0.35 μm | CBCM | [65] |
910 pJ/cycle at (1 kHz) | 4.3 × 104 | 1 | Analog | - | 23.4 mV/pF | - | - | 0.35 μm | CBCM | [74] |
1.5 × 104 μW (for 1–70 MHz) | 2.5 × 1012 | 256 × 256 | Digital | 1 | - | <1.8 | 1.2 | 90 nm | CBCM | [73] |
103 μW (for 35 fF at 100 kHz) | 6.45 × 104 | 1 | Digital |
9 873, 10 10 |
138 pulses/fF | ~70 | 1.8 | 0.18 μm | CBCM | This work |
1 Charge redistribution, 2 Charge sharing, 3 Charge sensitive amplifier, 4 Capacitance-to-frequency converter, 5 Ring oscillator, 6 Charge-based capacitance measurement. 7 This is the area of only one sensor pixel without electrodes and sensor evaluation modules. 8 Total power consumption is not reported, 9 Without pre-distortion, 10 With pre-distortion.