Figure 5.
Microscope images (832×) of Si-face SiC processed by the designed comparative experiments: (a) conventional lapping; (b) conventional CMP after conventional lapping(C-c); (c) ultrasonic CMP after conventional lapping (C-u); (d) ultrasonic lapping; (e) conventional CMP after ultrasonic lapping (U-c); (f) ultrasonic CMP after ultrasonic lapping (U-u).