Figure 6.
The variation of Si-face SiC surface morphology processed by different ways through atomic force microscopy (AFM) measurement (50 × 50 μm2 area): (a) conventional lapping; (b) conventional CMP after conventional lapping(C-c); (c) ultrasonic CMP after conventional lapping (C-u); (d) ultrasonic lapping; (e) conventional CMP after ultrasonic lapping (U-c); (f) ultrasonic CMP after ultrasonic lapping (U-u).