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. 2018 Nov 2;9:4609. doi: 10.1038/s41467-018-07099-9

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 5 — Mechanism analysis of interface potassium passivation. a Dark J–V characteristics of electron-only devices with and without interface potassium passivation. The inset shows the structure of the corresponding electron-only device. b Mott–Schottky plots of PSCs with and without interface potassium passivation. c Capacitance–frequency plots of PSCs with and without interface potassium passivation. d The logarithmic I-V plots of the FTO/CsFAMA/Au and FTO/KOH/CsFAMA/Au device, respectively. The inset shows the structure of the corresponding device. e The V_oc vs. Light Intensity curves of PSCs with and without interface potassium passivation and f the typical Nyquist plots of PSCs with and without interface potassium passivation. The inset shows the equivalent circuit diagram