Fig. 2.

Device performance. a J−V curves and the histogram of PCE for PBDB-TF:IT-4F-based devices with/without SA-1. Thermal annealing of the active films at 140 °C for 10 min was performed. b Device parameters of PBDB-TF:IT-4F devices as a function of the mole ratios of IT-4F:SA-1 or the weight ratio of SA-1 incorporated into the casting solution (error bars show standard deviation from the mean). c EQE curves of the corresponding devices. d PCEs of the devices based on PBDB-TF:IT-4F processed with or without SA-1 under various active layer thicknesses (the horizontal error bars represent the standard deviation of the thicknesses and the vertical error bars show standard deviation from the mean). e, the thermal stability of OSC devices processed with or without SA-1 (error bars show standard deviation from the mean). f The long-term storage stability of OSC devices processed with or without SA-1 (error bars show standard deviation from the mean)