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. 2018 Nov 7;9:4645. doi: 10.1038/s41467-018-07017-z

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 5 — The advantages of SAs over solvent additives. a J − V curves of OSCs fabricated by aged films using DIO or SA-1. b The histogram of PCE for aged devices with DIO or SA-1. c AFM height image and 3D images of PBDB-TF:IT-4F films with DIO or SA-1, for which the casted active layer was annealed after 24 h standing. d Photo-stability of PBDB-TF:IT-4F-based devices with DIO or SA-1 (encapsulated in air, AM 1.5 radiation to illumination of 100 mW cm⁻² for 130 h)