Table 3.
Sensing material | Structure of sensor | Target gas | T res(s) | LOD | T rec(s) | Ref. |
---|---|---|---|---|---|---|
GR | Chemiresistor | NO2 | 3000 | 4 %/100 ppb | 3000 | [113] |
Single-layered GR | FET | NO2 | 3600 | 2.5 ppm | – | [128] |
Ozone-treated GR | Chemiresistor | NO2 | 900 | 1.3 ppb | 1800 | [129] |
GR/PMMA on a flexible PET substrate | Chemiresistor | NO2 | 170 | 25 %/200 ppm | – | [130] |
RGO/hydrazine + WO3 | Chemiresistor | NO2 | – | 5 ppm | – | [131] |
Multilayered GR | Chemiresistor | NO2 | 1800 | 6 %/1 ppm | – | [124] |
RGO + NiO | Chemiresistor | NO2 | 125 | 200 %/1 ppm (200 °C) | 250 | [125] |
Bilayer GR | FET | NO2 | – | Establish a theoretical model | – | [62] |
RGO/FeCl3 + α-Fe2O3 | Chemiresistor | NO2 | 80 | 180 ppb | 44 | [109] |
RGO + PVP | QCM | NO2 | – | 20 ppm | – | [132] |
Printed RGO/S + Ag | Chemiresistor | NO2 | 12 | 74.6 %/50 ppm | 20 | [126] |
RGO/hydrazine + ZnO | Chemiresistor | NO2 | 165 | 25.6 %/5 ppm | 499 | [133] |
RGO + SnO2 aerogel | Chemiresistor | NO2 | 190 | 50 ppm | 224 | [134] |
GO + Cs | Chemiresistor | NO2 | 240 | 90 ppb | 540 | [135] |
RGO/NaBH4 | Chemiresistor | NO2 | 420 | 11.5 %/5 ppm | 1680 | [136] |
RGO + SnO2 | Chemiresistor | NO2 | 75 | 3.31 %/5 ppm (50 °C) | 300 | [137] |
RGO/WO3 | Chemiresistor | NO2 | 540 | 769 %/5 ppm | 1080 | [138] |
RGO/In2O3 | Chemiresistor | NO2 | 240 | 8.25/30 ppm | 1440 | [139] |
RGO reduced graphene oxide, GO Graphene oxide, GR Graphene, PVP Polyvinylpyrrolidone, QCM quartz crystal microbalance