Table 4.

A summary of recent researches about graphene-based gas sensors for H₂ detection at room temperature

Sensing material	Structure of sensor	Target gas	T res(s)	LOD	T rec(s)	Ref.
Pt/RGO/SiC	FET	H2	300	Voltage shift of ≈100 mV for 1 % H2 (100 °C)	–	[145]
GR/Pt	Chemiresistor	H2	540	16 %/4 vol%	–	[140]
Multilayered GR/Pd nanoribbon	Chemiresistor	H2	21	55 %/40 ppm	23	[146]
GR/Pt	Chemiresistor	H2	700	1 % concentration (175 °C)	700	[141]
GR/Pt	Chemiresistor	H2	120	80 %/1 % concentration	1200	[142]
GR/(Pt + Pd)	Chemiresistor	H2	<2	2 % concentration (40 °C)	18	[143]
GR/Pd	Chemiresistor	H2	–	1 % concentration	–	[147]
GR/Pd	Chemiresistor	H2	900	20 ppm	1800	[148]
GR	First-principle calculation	H2	–	–	–	[149]
RGO/TiO2/(Pd + Pt)	Chemiresistor	H2	18	92 %/500 ppm (180 °C)	29	[150]
RGO/SnO2 + Pt	Chemiresistor	H2	5	1 % concentration	4	[151]
RGO/Pd	Chemiresistor	H2	–	0.20 %	–	[152]
GR with mono-atom-vacancy	First-principle calculation	H2	–	10−35 mol L−1	–	[144]
RGO/Pd	Chemiresistor	H2	1200	0.4 %/0.2 ppm	900	[153]
GO	Chemiresistor	H2	270	6 %/800 ppm	306	[154]
PMMA/Pd NPs + SL GR	Chemiresistor	H2	108	66 %/2 %	330	[155]
GR/SnO2 NPs	FET	H2	1.2	3/100 ppm	1.6	[156]
GO/PEDOT:PSS	Chemiresistor	H2	30	4.2 %/100 ppm	25	[157]

RGO reduced graphene oxide, GR Graphene, PMMA Polymethylmethacrylate, NPs Nanoparticles, SL Single layer