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. 2015 Feb 13;7:203–218. doi: 10.1007/s40820-015-0034-8

Fig. 3.

Fig. 3

a Schematic diagram of BV doping on trilayer MoS2 FET. b Transfer characteristics of as-fabricated MoS2-based FET with and without doping. c Raman spectroscopy measurement. d Transfer characteristics of as-fabricated MoS2-based FET with different time in toluene. Adopted from [61]