Table 1.
CVD conditions for VS pSi thin film deposition
| Parameter | SiO2 substrate | Si active layer |
|---|---|---|
| Temperature (°C) | 630 | 630 |
| Pressure (Torr) | 5 | 1 |
| Time (min) | 30 | 300 |
| SiH4-H2 flow (sccm) | 20 | 10 |
| 200 ppm B2H6 in H2 flow (sccm) | 50 | 50 |
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