Figure 5.

Gating of an amine-functionalized nanopore–FET. Voltage gating was achieved via a stepwise increase of V_gate from −400 to 400 mV at 200 mV intervals. (A) Current–time traces showing the gating control of 10 kbp DNA translocation at applied V_gate of −400, −200, 0, 200, and 400 mV. (B) Dependence on (i) dwell time, (ii) equivalent area, and (iii) event frequency is shown as a function of the gating potentials. All data were expressed as percentage change with respect to V_gate = 0 mV, and in all cases, V_pore = −500 mV.