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. 2018 Nov 20;9:4893. doi: 10.1038/s41467-018-07383-8

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — Operation under DC and pulsed drive. a Current density (left-hand axis) and irradiance (right-hand axis) versus voltage for a 200 μm diameter device operated in DC (black lines) and pulsed (colored lines) drive; small black arrows indicate the direction of the voltage sweep. Hysteresis is imperceptible in the pulsed data. The pulse width and time between pulses illustrated schematically in the inset are t_on = 70 μs and t_off = 2000 μs, respectively. Increasing the background bias (V_bias) significantly increases the electroluminescence intensity as indicated by the vertical black arrow. b External quantum efficiency of the same device under DC and pulsed drive (t_on = 70 μs, 15 μs, and 2 μs for filled symbols, void symbols, and colored lines, respectively) with varying V_bias and t_off. The highest current density trace (brown line) was achieved with a 50 μm diameter device that degraded during the reverse sweep