Table 2.
Summary of the catalyst‐free direct CVD growth parameters and morphology of graphene on semiconductors
| Substrate | CVD systems | Precursors (solid/liquid/gas) | Flow rate of Ar/H2 [sccm] | Time [min] | Temp [°C] | Morphology | Ref. |
|---|---|---|---|---|---|---|---|
| Si (001) | Photoemission‐assisted PECVD (2000–4000 Pa) | CH4 (0.5 sccm) | Ar (1.7) | 20 | 700 | Networked nanographite | 97 |
| Si | Remote PECVD (Power: 100 W) | CH4 (0.204 Torr, 30 sccm) | – | 180 (3 h) | 525 | Island type nanographene | 24 |
| Si | Microwave surface wave plasma CVD | C2H2 (5 sccm) | Ar (100) and H2 (0–35) | 4 | 500 | Multilayered graphene (MLG) | 98 |
| N‐Si (100) | PECVD (40 Pa) | CH4 (:3) | H2 (:4) | 20–50 | 780 | Graphene nanowalls | 99 |
| Si (100) | Thermal LPCVD (2–100 Torr) | C2H2 (25 sccm) | Ar (50) | 60 | 800–1100 | Triangle nanographenes (TNGs) | 89 |
| Si on insulator (SOI) | LPCVD (300 mTorr) | CH4 (35 sccm) | 6 (H2/Ar) | 30 | 870–970 | Few layered graphene (FLG) | 15 |
| N & P type Si (100), (111), and (110) | Thermal APCVD | CH4 (180 sccm) | 10 (H2) | 60 | 900–930 | SLG, BLG, and FLG | 104 |
| Si | Thermal APCVD | CH4 (8 sccm) | 50 (H2/Ar) | 360 (6 h) | 1130 | Vertically aligned GNs | 27 |
| Si | HFCVD (2 kPa) | CH4 (:1) | (Ar:H240:10) | 5–60 | 700–1000 | Petaloid GNs on Si nanocones | 110 |
| Si | HFCVD | CH4 (ratio 1) | 5:45 (H2:Ar) | 3 | 1000 | Vertical GNs on Si nanocones | 111 |
| Si nanoparticles | APCVD | CH4 (50 sccm) and CO2(50 sccm) | 50 (H2) | 10 and 20 | 900–1100 | MLG | 113 |
| Ge | APCVD | H2:CH4 (50:0.1) | 50 (H2) | 100 | 910 | Monolayered graphene | 18 |
| Ge (110)/Si (110) and Ge (111)/Si (110) | LPCVD | CH4 | H2 | 5–120 | 900–930 | Monolayered graphene | 14 |
| Ge (001) | APCVD | CH4 (1–4.4) | 300 Ar (200) and H2 (100) | 1–18.25 | 910 | Armchair graphene nanoribbons | 121 |
| Ge (001), Ge (110), and Ge (111) | APCVD | CH4 (3.6–4.6) | Ar (200) and H2 (100) | – | 910 | Epitaxial strained graphene | 123 |
| Ge (100)/Si (100) | LPCVD (700–780 mbar) | CH4 (5–15) | Ar and H2 (20:1) | 20–75 | 900–930 | Flakes/1/2/3MLG | 124 |
| Ge (110) | APCVD | CH4 (0.5) | (200)Ar and H2 (25–30) | 60–200 | 910 | Unidirectionally aligned islands | 120 |
| Ge (100)/Si (100) | LPCVD (850 mbar) | CH4 1:Ar (200) | Ar | – | 900 | Large area high quality graphene | 125 |
| Ge (001)/Si (001) | UHV‐CVD | C2H4 (5) | – | 90–200 | 930 | MLG | 132 |
| Ge (100) | Cold‐wall LPCVD (100 mbar) | CH4 (1–10) | 800 and 200 (Ar and H2) | 30–120 | 930 | Nanoribbons/SLG/MLG | 126 |
| 2 µm Ge (001)/Si (001) | LPCVD (700 mbar) | CH4 | Ar and H2 | 60 | 885 | Large area uniform (200 mm) MLG | 130 |
| 2 µm Ge (100)/Si (100) | LPCVD | CH4 | H2 | 60 | 900 | High quality large area (200 mm) graphene | 131 |
| Ge (001) | APCVD | CH4 (2 sccm) | 200 and 100 (Ar and H2) | 120 | 910 | Semiconducting armchair graphene nanoribbons | 135 |
| GaN (0001) | LPCVD (750 mbar) | C2H2 (158 and 160 sccm) | NH3 (1000 sccm) | 5 | 950 | Large area smooth and transparent carbon films | 139 |
| p‐GaN | PECVD (10 mTorr) 50 W | CH4 (2 sccm) | H2 (20 sccm) | 60–180 | 600 | Polycrystalline transparent graphene films | 140 |
| SiC | Remote PECVD (Power: 100 W) | CH4 (0.20 Torr, 30 sccm) | – | 120 (2 h) | 500 | Island type nanographene | 24 |
| SiC | ECR‐PECVD (Power: 100 W) | CH4 (5 sccm) | Ar (25 sccm) | 30 | 600–800 | Vertical GNs | 143 |
| 6H‐SiC (0001) | RH‐LPCVD (100–800 mbar) | CH4 (0.5–8 sccm) | Ar (10–50 sccm) and H2 (4–32 sccm) | 1–6 | 1250–1550 | Monolayer graphene and FLG | 144 |