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. 2018 Nov 23;8:17323. doi: 10.1038/s41598-018-35768-8

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Temperature dependent PL measurement of (a) CdSe/CdS and (b) CdSe/CdS/ZnS QDs from 10 to 300 K. (c) The integrated PL intensity (normalized) of the samples with temperature. The data is fitted by equation (2). The inset shows that trapped carrier could overcome the potential barrier with increasing temperature. (d) The band width of the samples at different temperatures. The inset shows the peak positions with temperature, and was fitted by Varshni formula.