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. 2018 Nov 20;18(11):4042. doi: 10.3390/s18114042

Table 4.

Main characteristics of representative EGFET-based glucose sensors.

Ref. Electrode Sensitivity Range (mM) Linearity (%) Drift (mV/h) Hysteresis (mV) Reference Electrode Sensitive Area (μm2) FET Device Type
[101] AZO 60.5 μA·mM−1·cm−2 0–13.9 99.96 1.27 4.83 Ag/AgCl 2 × 2·106 CD4007UB A
[135] Au −61.6 mV/decade 0.125–1 99.60 nr nr Ag/AgCl 10 × 10 0.6 μm CMOS P
[136] PPI/NiTsPc nr 0.05–1 nr nr nr Ag/AgCl nr AD620 I.A. P
[137] Au −58 mV/decade 0.1–2 99.97 0.50 nr Ag/AgCl 20 × 56 32 × 32 array 1.2 μm CMOS P
[138] Ru-doped TiO2 320 μV/(mg/dL) 5.55–27.55 99.50 nr nr Ag/AgCl 2 × 2·106 LT1167 I.A. P
[139] ZnO 20.33 μA·mM−1·cm−2 0.5–10 nr nr nr Ag/AgCl nr CD4007UB P
[140] ZnO nanorods nr 0.01–5 nr nr nr Ag/AgCl nr Glass FET P

P, potentiometric; A, amperometric; I.A., instrumentation amplifier; nr, not reported; PPI/NiTsPc, poly(propylene imine) dendrimer/nickel tetrasulphonated phthalocyanine.