Table 6.
FET device characteristics for EGFET sensors.
| Refs. | FET Device | Model | CMOS Process (µm) | Main Features | W/L (µm/µm) |
|---|---|---|---|---|---|
| [158] | NC | N/A | nr | SOI-FET working in parasitic Bipolar Junction Transistor (BJT) operation method | nr |
| [159] | NC | N/A | 0.5 | CMOS–DPDM n–well | 600/20 |
| [30,32,42,92,94,101,104,105,113,114,117,139,147,148,160,161,162,163,164,165,166,167] | C | CD4007UB | nr | CMOS dual complementary pair plus inverter | nr |
| [41,168,169] | C | NDP6060L | nr | n–Channel logic level enhancement mode FET | nr |
| [170,171] | C | HEF4007 | nr | Dual complementary pair and inverter | nr |
| [172] | C | BS170 | nr | n−Channel MOSFET | 9700/2 |
| [173] | NC | N/A | 0.16 | Differential source follower | 8/2 |
| [174] | NC | N/A | 0.35 | Rectangular p-type MOSFET | 18/1 |
| [175] | NC | N/A | 0.6 | Pt and Au gate MOSFET | 100/10 |
| [95,108,109,138] | C | LT1167 | nr | Instrumentation amplifier | nr |
| [176] | C | 2SK246Y | nr | n-Channel junction FET | nr |
C, commercial FET device; NC, noncommercial FET device; DPDM, double poly double metal; nr, not reported; N/A, not applicable.