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. 2018 Nov 3;18(11):3760. doi: 10.3390/s18113760

Figure 11.

Figure 11

The noise equivalent power (NEP) at 0.6 THz (a) and voltage sensitivity (b) of the InGaAs diode detector with different In/Ga ratios at 0.3 THz and 0.6 THz frequency with modulation frequency of 1 kHz. Inset in the panel (a) shows the schematic design of the InGaAs bow-tie diode. Inset in the panel (b) indicates the raster scan of the 0.6 THz beam profile at the focal plane obtained with detector B203. Shadowed area in panel (b) indicates optimal working regime of the detector.