Table 1.

Technological conditions and parameters of characterization of investigated bow-tie detectors: BEP—beam equivalent pressure; ∆2θ—misalignment between the (400) reflexes of InP substrate and InGaAs epilayer; content of In in percent; d—thickness of InGaAs, nm; rms—surface roughness, nm; R—resistance, Ω; E—emission energy, eV.

Samples	B197	B203	B204
BEP ratio In/Ga	2.04	2.06	2.08
∆2θ, deg.	−0.07	−0.064	0
In, %	47.0	52.5	53.2
InGaAs layer thickness, d, nm	540	540	540
rms, nm	0.167	0.322	0.166
R, Ω	470–500	850–900	770–780
E, eV	0.739	0.736	0.735