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. 2018 Oct 26;11(11):2102. doi: 10.3390/ma11112102

Figure 2.

Figure 2

Bipolar analog-resistive switching characteristics of the Ta/TaOx/Al2O3/Pd device under the DC sweeping mode: (a) consecutive DC sweeping with different stop voltages from −2 to −6 V in the RESET process; (b) consecutive DC sweeping with different stop voltages from 2.5 to 5.5 V in the SET process; (c) consecutive DC sweeping with different compliance currents from 500 nA to 2.2 mA in the SET process (inset: 60 different conductance states obtained by modulating different compliance currents); and (d) retention characteristics of nine different resistance states of the Ta/TaOx/Al2O3/Pd device.