Table 3.

Comparison of performance between the temperature-compensated oscillator in this work and other MEMS-referenced oscillators in the same frequency range.

Properties	This Work	[28]	[29]	[3]
Resonator Type and Material	Single-Crystal SOI Lateral Comb-Drive	3C-SiC, Comb-Drive	Capacitive Transduction H-Shaped Tuning Fork	Poly-Si Two-Port, Folded-Beam, Comb-Drive
Modes of Oscillation	3	3	1	1
Oscillation Frequencies (fosc)	~27.0 kHz (Mode 1 Only)	27.1 kHz, 30.3 kHz, 24.2 kHz	32.768 kHz	16.5 kHz
Q-Factor	13,000	13,550,10,300 and 9480	52,000	23,400
CMOS Sustaining Amplifier Chip	0.5 μm CMOS	Discrete Components	180 nm CMOS	CMOS Transimpedance Amplifier (TIA)
Die Size	1.5 mm × 1.5 mm	Discrete Components	1.55 mm × 0.85 mm	420 µm × 320 µm (Resonator Only)
Supply Voltage (VDD)	3.3 V	3.0 V	1.4–4.5 V	2.5 V
SSB Phase Noise	−65 dBc/Hz @ 10 Hz Offset	−78 dBc/Hz @ 12 Hz Offset	Not Reported	−72 dBc/Hz @ 1 kHz Offset (Simulated)
FoM *	133.61	Not Reported	Not Reported	Not Reported
Startup Time	~600 µs	Not Reported	0.2 s	Not Reported
Real-Time Temperature Compensation	Yes	No	Yes	No
Temperature coeficients of frequency (TCf)	−34 ppm/°C (MEMS only); <±3 ppm (TCO) over 11.2 °C to +41.2 °C	24.75 ppm /°C ** (rocking vibration mode of MEMS) over 26.85 °C to +426.85 °C	±100 ppm (MEMS only); ±3 ppm (TCXO) & 100 ppm max (XO) over −40 °C to +85 °C	−10 ppm/°C (MEMS only) over 26.85 °C to +96.85 °C
Year	2018	2009	2015	1999

* $FoM=20\log \left(\frac{{\omega }_0}{\Delta \omega }\right)-L(\Delta \omega )-10\log \left(\frac{P_C}{1\mathrm{m}\mathrm{W}}\right)$, ** ANSYS finite element simulation results.