Table 3.

Experimental data and simulations for PS + 50 nm SiO₂ + 50 nm Al₂O₃ and PS + 100 nm Al₂O₃ samples. The subsurface SiO₂ layer displays a dielectric permittivity value of 3.9 (error = 0.3%).

	Signal			Permittivity
	Exp. (Hz/V2)	Sim. (Hz/V2)	Error (%)	εinterphase	εmatrix
PS + 100 nm Al2O3	1.71 ± 0.26	1.65	3.24	εAl2O3 = 9.8	εAl2O3 = 9.8
PS + 50 nm SiO2 + 50 nm Al2O3	1.48 ± 0.17	1.48	0.27	εSiO2 = 3.9	εAl2O3 = 9.8