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. 2018 Dec 12;8(12):1033. doi: 10.3390/nano8121033

Figure 2.

Figure 2

(a) Schematic illustration of the absorption structure which comprises a ultra-thin sheet, dielectric spacer and metallic ground plane. The amplitude of E field of forward going wave at the ground plane is chosen to be 1 while the amplitude of incident E field is denoted as a. (b) The resistance (R) and reactance (X) of the impedance for PIMS as a function of the dielectric spacer thickness. Reproduced from reference [79], with permission from Optical Society of America, 2011.