Table 1.
The performance parameters of a-IGZO TFTs with SiO2 gate dielectric.
| Width (μm) | Vth (V) | Ion/Ioff | SS (V/dec) | µfet (cm2/V·s) |
|---|---|---|---|---|
| 500 | 0.83 | 2.9 × 107 | 0.11 | 27.9 |
| 1000 | 0.85 | 4.6 × 107 | 0.11 | 21.6 |
| 1500 | 0.88 | 8.1 × 107 | 0.10 | 13.5 |
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