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. 2019 Jan 3;10:54. doi: 10.1038/s41467-018-07904-5

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — Images of a stacked 3-T device. a Sequential images of the process of printing seven metal layers (scale bar is 1 mm). b A polarized microscopy image of the transistor area (scale bar is 200 μm). c A topographic AFM image (scan area is 100 × 100 μm) measured on top of the channel area. The inset graph shows the profile along the cross-section line. d Cross-sectional SEM image of the stacked 3-T device (M1-7: metal layers, GI1-6: dielectric insulator layers, OSC1-3: organic semiconductor layers, scale bar is 250 nm, Pt was sputtered on the top prior to the SEM measurement)