Table I. Performance comparison with state-of-the-art EIS systems.

Reference	[2]	[9]	[3]	[30]	[8]	This work
Topology	Resistive or SC TIA	TIA + Direct I/Q conversion	TIA + Direct I/Q conversion	SC TIA + Multiplying ADC	V/I sensing + Direct I/Q conversion	Lock-in + ΣΔ
Technology	0.18 μm	0.5 μm	0.35 μm	0.13 μm	0.13 μm	0.18 μm
Area (per Channel)	0.02 mm2	0.06 mm2	0.01 mm2	0.06 mm2	- mm2	0.1 mm2
Sensing Area	0.16 ×0.12 mm2	3×3 mm2 (estimation)	1×1 mm2	1.05×1.6 mm2	9 pixel groups of 0.128 mm2	4.5×2.4 mm2
No. of Electrodes	5 × 10	100 (estimation)	10 × 10	16	144	59,760
Electrode Pitch	150 μm	>600 μma	100 μm	300 μm	89.4/357.8 μma	13.5 μm
No. Channels	50	100	100	16	144	32
Impedance Range	-	-	100 Ω - 100 MΩ	~GΩ	10 kΩ – 1 GΩ	1 kΩ – 10 GΩ
Transduced Current Range	0.1 nA – 250 μA	78 fA – 100 nA	+/- 25 μA	Max. 400nA	-	10 pA – 30 μA
Frequency Range	20 Hz	1 mHz – 10 kHz	10 Hz – 50 MHz	0.1 Hz – 10 kHz	500 kHz – 4 MHz	1 Hz – 1 MHz
Noise	25 μVrms (1 Hz – 1 kHz)	-	330 pArms (1 Hz – 10 Hz) 577 pArms (1 Hz – 1 kHz)	320 fArms	-	6.4 pArms (1 Hz – 100 kHz)
DR	-	122 dB	97 dB	140 dB	-	102 dB
Supply	3.3 V	3 V	3.3 V	1.2 V	3.3 V	3.3/1.8V
Power (per Channel)	2.7 mW	6 μV	736 μV	42 μVb	-	412 μWb
Multiple Functions	-	-	-	-	Impedance, Voltage, optical	Impedance, Electrophysiology

^aEquivalent square-shaped pixel dimension, for the same spatial density.

^bADC included