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. 2019 Jan 17;9:202. doi: 10.1038/s41598-018-36549-z

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) I_min versus I_max at V_d = 0.3 V for different GaSb Zn doping. The doping is controlled by the diethylzinc (DEZn) precursor flow during growth. The blue diamonds have 2–3x flow relative to the red diamonds and typically ~40x maximum current. Each point has the same gate voltage sweep range. (b) An example I_d − V_g for a 1x GaSb doped device at 0.3 V (black triangle) and 0.05 V (red circle). The reduction of current with increasing gate voltage at V_d = 0.05 V is a sign of source depletion and insufficient GaSb doping. (c) Relative on current versus GaSb doping concentration for a given GaSb core diameter d_c = 32 nm as predicted by s-device. This illustrates the importance of having as high as possible GaSb doping concentration.